Paul Edwards

Research Fellow

  1. Cathodoluminescence studies of chevron features in semi-polar (11-22) InGaN/GaN multiple quantum well structures

    Brasser, C., Bruckbauer, J., Gong, Y. P., Jiu, L., Bai, J., Warzecha, M., Edwards, P. R., Wang, T. & Martin, R. W. 1 May 2018 In : Journal of Applied Physics. 123, 7 p., 174502

    Research output: Research - peer-reviewArticle

  2. Generated carrier dynamics in V-pit enhanced InGaN/GaN light emitting diode

    Ajia, I. A., Edwards, P. R., Pak, Y., Belekov, E., Roldan, M. A., Wei, N., Liu, Z., Martin, R. W. & Roqan, I. S. 21 Mar 2018 In : ACS Photonics. 5, 3, p. 820-826 7 p.

    Research output: Research - peer-reviewArticle

  3. Multi-wavelength emission from a single InGaN/GaN nanorod analyzed by cathodoluminescence hyperspectral imaging

    Kusch, G., Conroy, M., Li, H., Edwards, P. R., Zhao, C., Ooi, B. S., Pugh, J., Cryan, M. J., Parbrook, P. J. & Martin, R. W. 29 Jan 2018 In : Scientific Reports. 8, 1, 8 p., 1742

    Research output: Research - peer-reviewArticle

  4. Eu-Mg defects and donor-acceptor pairs in GaN: photodissociation and the excitation transfer problem

    Singh, A. K., O'Donnell, K. P., Edwards, P. R., Lorenz, K., Leach, J. H. & Boćkowski, M. 22 Jan 2018 In : Journal of Physics D: Applied Physics. 51, 6, 5 p., 065106

    Research output: Research - peer-reviewArticle

  5. Luminescence of Eu3+ in GaN(Mg, Eu): transitions from the 5D1 level

    Singh, A. K., O'Donnell, K. P., Edwards, P. R., Cameron, D., Lorenz, K., Kappers, M. J., Boćkowski, M., Yamaga, M. & Prakash, R. 14 Dec 2017 In : Applied Physics Letters. 111, 24, 4 p., 241105

    Research output: Research - peer-reviewArticle

  6. Quantum well engineering in InGaN/GaN core-shell nanorod structures

    Bryce, C. G., Le Boulbar, E. D., Coulon, P-M., Edwards, P. R., Gîrgel, I., Allsopp, D. W. E., Shields, P. A. & Martin, R. W. 27 Sep 2017 In : Journal of Physics D: Applied Physics. 50, 42, 6 p., 42LT01

    Research output: Research - peer-reviewArticle

  7. Spatially-resolved optical and structural properties of semi-polar (11-22) AlxGa1-xN with x up to 0.56

    Bruckbauer, J., Li, Z., Naresh-Kumar, G., Warzecha, M., Edwards, P. R., Jiu, L., Gong, Y., Bai, J., Wang, T., Trager-Cowan, C. & Martin, R. W. 7 Sep 2017 In : Scientific Reports. 7, 10 p., 10804

    Research output: Research - peer-reviewArticle

  8. Charge carrier localised in zero-dimensional (CH3NH3)3Bi2I9 clusters

    Ni, C., Hedley, G. J., Payne, J., Svrcek, V., McDonald, C., Jagadamma, L. K., Edwards, P., Martin, R., Mariotti, D., Maguire, P., Samuel, I. & Irvine, J. 1 Aug 2017 In : Nature Communications. 8, 7 p., 170

    Research output: Research - peer-reviewArticle

  9. Influence of the copper content on the optical properties of CZTSe thin films

    Yakushev, M. V., Sulimov, M. A., Márquez-Prieto, J., Forbes, I., Krustok, J., Edwards, P. R., Zhivulko, V. D., Borodavchenko, O. M., Mudryi, A. V. & Martin, R. W. 1 Aug 2017 In : Solar Energy Materials and Solar Cells. 168, p. 69-77 9 p.

    Research output: Research - peer-reviewArticle

  10. Analysis of doping concentration and composition in wide bandgap AlGaN:Si by wavelength dispersive X-ray spectroscopy

    Kusch, G., Mehnke, F., Enslin, J., Edwards, P. R., Wernicke, T., Kneissl, M. & Martin, R. W. 13 Feb 2017 In : Semiconductor Science and Technology. 32, 3, 7 p., 035020

    Research output: Research - peer-reviewArticle

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