Paul Edwards

Research Fellow

  1. Quantum well engineering in InGaN/GaN core-shell nanorod structures

    Bryce, C. G., Le Boulbar, E. D., Coulon, P-M., Edwards, P. R., Gîrgel, I., Allsopp, D. W. E., Shields, P. A. & Martin, R. W. 27 Sep 2017 In : Journal of Physics D: Applied Physics. 50, 42, 6 p., 42LT01

    Research output: Contribution to journalArticle

  2. Spatially-resolved optical and structural properties of semi-polar (11-22) AlxGa1-xN with x up to 0.56

    Bruckbauer, J., Li, Z., Naresh-Kumar, G., Warzecha, M., Edwards, P. R., Jiu, L., Gong, Y., Bai, J., Wang, T., Trager-Cowan, C. & Martin, R. W. 7 Sep 2017 In : Scientific Reports. 7, 10 p., 10804

    Research output: Contribution to journalArticle

  3. Charge carrier localised in zero-dimensional (CH3NH3)3Bi2I9 clusters

    Ni, C., Hedley, G. J., Payne, J., Svrcek, V., McDonald, C., Jagadamma, L. K., Edwards, P., Martin, R., Mariotti, D., Maguire, P., Samuel, I. & Irvine, J. 1 Aug 2017 In : Nature Communications. 8, 7 p., 170

    Research output: Contribution to journalArticle

  4. Influence of the copper content on the optical properties of CZTSe thin films

    Yakushev, M. V., Sulimov, M. A., Márquez-Prieto, J., Forbes, I., Krustok, J., Edwards, P. R., Zhivulko, V. D., Borodavchenko, O. M., Mudryi, A. V. & Martin, R. W. 1 Aug 2017 In : Solar Energy Materials and Solar Cells. 168, p. 69-77 9 p.

    Research output: Contribution to journalArticle

  5. Analysis of doping concentration and composition in wide bandgap AlGaN:Si by wavelength dispersive X-ray spectroscopy

    Kusch, G., Mehnke, F., Enslin, J., Edwards, P. R., Wernicke, T., Kneissl, M. & Martin, R. W. 13 Feb 2017 In : Semiconductor Science and Technology. 32, 3, 7 p., 035020

    Research output: Contribution to journalArticle

  6. Hysteretic photochromic switching of Eu-Mg defects in GaN links the shallow transient and deep ground states of the Mg acceptor

    Singh, A. K., O'Donnell, K. P., Edwards, P. R., Lorenz, K., Kappers, M. J. & Bokowski, M. 3 Feb 2017 In : Scientific Reports. 7, 6 p., 41982

    Research output: Contribution to journalArticle

  7. Evolution of the m-plane quantum well morphology and composition within a GaN/InGaN core–shell structure

    Coulon, P-M., Vajargah, S. H., Bao, A., Edwards, P. R., Le Boulbar, E. D., Girgel, I., Martin, R. W., Humphreys, C. J., Oliver, R. A., Allsopp, D. W. E. & Shields, P. A. 1 Feb 2017 In : Crystal Growth and Design. 17, 2, p. 474-482 9 p.

    Research output: Contribution to journalArticle

  8. Characteristics of GaN-based light emitting diodes with different thicknesses of buffer layer grown by HVPE and MOCVD

    Tian, P., Edwards, P. R., Wallace, M. J., Martin, R. W., McKendry, J. J. D., Gu, E., Dawson, M. D., Qiu, Z-J., Jia, C., Chen, Z., Zhang, G., Zheng, L. & Liu, R. 23 Jan 2017 In : Journal of Physics D: Applied Physics. 50, 7, 12 p., 075101

    Research output: Contribution to journalArticle

  9. Analysis of defect-related inhomogeneous electroluminescence in InGaN/GaN QW LEDs

    Ren, C. X., Rouet-Leduc, B., Griffiths, J. T., Bohacek, E., Wallace, M. J., Edwards, P. R., Hopkins, M. A., Allsopp, D. W. E., Kappers, M. J., Martin, R. W. & Oliver, R. A. 30 Nov 2016 In : Superlattices and Microstructures. 99, p. 118-124 7 p.

    Research output: Contribution to journalArticle

  10. Colour tuning in white hybrid inorganic/organic light-emitting diodes

    Bruckbauer, J., Brasser, C., Findlay, N. J., Edwards, P. R., Wallis, D. J., Skabara, P. J. & Martin, R. W. 12 Oct 2016 In : Journal of Physics D: Applied Physics. 49, 40, 9 p., 405103

    Research output: Contribution to journalArticle

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