Eu-Mg defects and donor-acceptor pairs in GaN: photodissociation and the excitation transfer problem

Research output: Research - peer-reviewArticle

We have investigated temperature-dependent photoluminescence (TDPL) profiles of Eu3+ ions implanted in an HVPE-grown bulk GaN sample doped with Mg and of donor-acceptor pairs (DAP) involving the shallow Mg acceptor in GaN(Mg) (unimplanted) and GaN(Mg):Eu samples. Below 125 K, the TDPL of Eu3+ in GaN(Mg):Eu correlates with that of the DAP. Below 75 K, the intensity of Eu3+ emission saturates, indicating a limitation of the numbers of Eu-Mg defects available to receive excitation transferred from the host, while the DAP continues to increase, albeit more slowly in the implanted than the unimplanted sample. Prolonged exposure to UV light at low temperature results in the photodissociation of Eu-Mg defects, in their Eu1(Mg) configuration, with a corresponding increase in shallow DAP emission and the emergence of emission from unassociated EuGa (Eu2) defects.
Original languageEnglish
Article number065106
Number of pages5
JournalJournal of Physics D: Applied Physics
Volume51
Issue number6
DOIs
StatePublished - 22 Jan 2018

    Research areas

  • temperature-dependent photoluminescence, photodissociation, donor–acceptor pairs

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